Investigation of NbOx-based volatile switching device with self-rectifying characteristics
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-019-9894-0.pdf
Reference7 articles.
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4. Park J, Cha E, Karpov I, et al. Dynamics of electro-forming and electrically driven insulator-metal transition in NbOx selector. Appl Phys Lett, 2016, 108: 232101
5. Kim K M, Zhang J, Graves C, et al. Low-power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high-density crossbar application. Nano Lett, 2016, 16: 6724–6732
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