Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application-Reference-Cited by-同舟云学术

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Published:2016-10-17 Issue:11 Volume:16 Page:6724-6732
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Kyung Min¹,Zhang Jiaming¹,Graves Catherine¹,Yang J. Joshua²,Choi Byung Joon³,Hwang Cheol Seong⁴,Li Zhiyong¹,Williams R. Stanley¹

Affiliation:

1. Hewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, California 94304, United States

2. Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States

3. Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea

4. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 151-744, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01781

Reference38 articles.

1. The missing memristor found

2. Memristive switching mechanism for metal/oxide/metal nanodevices

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

4. Memristive devices for computing

5. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

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