Fatigue of NbO<sub> <i>x</i> </sub>-Based Locally Active Memristors—Part I: Experimental Characteristics-Reference-Cited by-同舟云学术

Fatigue of NbO_x-Based Locally Active Memristors—Part I: Experimental Characteristics

Published:2023-12 Issue:12 Volume:70 Page:6600-6605
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ding Yanting¹,Li Yu¹^ORCID,Jia Shujing¹,Chen Pei¹^ORCID,Zhang Xumeng¹^ORCID,Wang Wei²,Li Yang²^ORCID,Hao Yunxia³,Bi Jinshun³^ORCID,Gong Tiancheng³^ORCID,Jiang Hao¹^ORCID,Wang Ming¹^ORCID,Liu Qi¹^ORCID,Xu Ningsheng¹,Liu Ming¹

Affiliation:

1. State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China

2. Peng Cheng Laboratory, Shenzhen, China

3. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Project of Biren Technology;

Zhejiang Lab Open Research Project

MOE innovation platform

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10286432.pdf?arnumber=10286432

Reference29 articles.

1. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

2. A steep-slope transistor based on abrupt electronic phase transition

3. Multiple slopes in the negative differential resistance region of NbOx-based threshold switches

4. Origin of Current‐Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity

5. NbO2 based threshold switch device with high operating temperature (85 °C) for steep-slope MOSFET (&2tilde; mV/dec) with ultra-low voltage operation and improved delay time;park;IEDM Tech Dig,0

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4. Fatigue of NbO_x-Based Locally Active Memristors—Part II: Mechanisms and Modeling;IEEE Transactions on Electron Devices;2023-12