The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping-Reference-Cited by-同舟云学术

The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping

Published:2022-06 Issue:6 Volume:43 Page:870-873
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Ao¹,Fu Yuyang²^ORCID,Ma Guokun¹^ORCID,Yang Gaoqi²,Liu Nengfan²,Zhao Xiaohu²,Zhang Ziqi²^ORCID,Tao Li¹,Wan Houzhao¹,Rao Yiheng¹,Duan Jinxia¹,Shen Liangping¹,Zhang Jun¹,Sun Peng³,Yang Daohong³,Chang Ting-Chang⁴^ORCID,Wang Hao¹^ORCID

Affiliation:

1. Hubei Yangtze Memory Laboratories, Wuhan, China

2. School of Microelectronics and the Faculty of Physics and Electronics Science, Hubei University, Wuhan, China

3. Wuhan Xinxin Semiconductor Manufacturing Company Ltd., Wuhan, China

4. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

NSFC

Science and Technology Major Project of Hubei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09751609.pdf?arnumber=9751609

Reference24 articles.

1. In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors

2. Mott Memory and Neuromorphic Devices

3. Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application

4. Nb1-xO2 based universal selector with ultra-high endurance (>1012), high speed (10ns) and excellent $\text{V}_{th}$ stability;luo;Proc Symp VLSI Technol,2019

5. Research on Temperature Effect in Insulator–Metal Transition Selector Based on NbOx Thin Films

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