Coupling-Free Readout Scheme for Memcapacitors With NAND Flash Structure-Reference-Cited by-同舟云学术

Coupling-Free Readout Scheme for Memcapacitors With NAND Flash Structure

Published:2024-08 Issue:8 Volume:71 Page:4670-4676
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ahn Suhyeon¹^ORCID,Yu Junsu²^ORCID,Hwang Hwiho³,Song Min Suk³,Yu Dayeon³,Hwang Sungmin⁴^ORCID,Chung In-Young⁵,Choi Woo Young²^ORCID,Kim Hyungjin³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inha University, Incheon, South Korea

2. Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea

3. Department of Semiconductor Engineering, Division of Materials Science and Engineering, Hanyang University, Seoul, South Korea

4. Department of AI Semiconductor Engineering, Korea University, Sejong, South Korea

5. Department of Electronics and Communication Engineering, Kwangwoon University, Seoul, South Korea

Funder

National Research Foundation (NRF) Grant through Korean Government

Ministry of Science and ICT (MSIT), South Korea, under the Information Technology Research Center (ITRC) through the Institute for Information and Communications Technology Planning and Evaluation

Brain Korea 21 Four Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10583960.pdf?arnumber=10583960

Reference40 articles.

1. ImageNet classification with deep convolutional neural networks

2. Deep learning

3. Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

4. Ferroelectric Field-Effect Transistors for Binary Neural Network With 3-D NAND Architecture

5. Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications