3D resistive RAM cell design for high-density storage class memory—a review-Reference-Cited by-同舟云学术

3D resistive RAM cell design for high-density storage class memory—a review

Published:2016-03-09 Issue:6 Volume:59 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Hudec Boris,Hsu Chung-Wei,Wang I-Ting,Lai Wei-Li,Chang Che-Chia,Wang Taifang,Fröhlich Karol,Ho Chia-Hua,Lin Chen-Hsi,Hou Tuo-Hung

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

http://link.springer.com/content/pdf/10.1007/s11432-016-5566-0.pdf

Reference105 articles.

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3. Burr G W, Kurdi B N, Scott J C, et al. Overview of candidate device technologies for storage-class memory. IBM J Res Dev, 2008, 52: 449–464

4. Burr G W, Shenoy R S, Virwani K, et al. Access devices for 3D crosspoint memory. J Vac Sci Technol B, 2014, 32: 040802

5. Hwang C S. Prospective of semiconductor memory devices: from memory system to materials. Adv Electron Mater, 2015, 1: 1400056

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