A Simulation Study of Junctionless Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Symmetrical Side Gates
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00258-7.pdf
Reference32 articles.
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3. Naderi A, Heirani F (2018) A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide. AEU-International Journal of Electronics and Communications 85:91–98
4. Abbasi A, Orouji AA (2013) A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs. Mater Sci Semicond Process 16(6):1821–1827
5. Naderi A, Satari KM, Heirani F (2018) SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics. Mater Sci Semicond Process 88:57–64
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