A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide

Author:

Naderi Ali,Heirani Fatemeh

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference29 articles.

1. CMOS VLSI engineering Silicon-on-Insulator (SOI);Kuo,1998

2. SOI LDMOSFET with up and down extended stepped drift region;Saremi;J Electron Mater,2017

3. The best control of parasitic BJT effect in SOI-LDMOS with SiGe window under channel;Orouji;IEEE Trans Electron Devices,2012

4. A novel high-breakdown-voltage SOI MESFET by modified charge distribution;Aminbeidokhti;IEEE Trans Electron Devices,2012

5. High-voltage and RF performance of SOI MESFET using controlled electric field distribution;Aminbeidokhti;IEEE Trans Electron Devices,2012

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