SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Novel SOI-MESFET for High-Frequency Operations: Improving Electric Field Distribution;Brazilian Journal of Physics;2024-08-13
2. Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications;PLOS ONE;2024-04-26
3. Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics;International Journal of Electronics;2023-10-06
4. A nanoscale junctionless FET to amend the electric field distribution using a β-Ga2O3 packet;Journal of Materials Science: Materials in Electronics;2023-08
5. Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets;Electrical Engineering;2023-05-13
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