Performance Analysis of Multi-Channel-Multi-Gate-Based Junctionless Field Effect Transistor
Author:
Affiliation:
1. Department of Electrical and Electronics Engineering, Lovely Professional University, Jalandhar, Punjab, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/03772063.2023.2218318
Reference38 articles.
1. Performance Enhanced Unsymmetrical FinFET and its Applications
2. Simulation study on short channel double-gate junctionless field-effect transistors
3. Simulation and Characterization of Junction Less CMOS Inverter at Various Technology Nodes
4. A Simulation Study of Junctionless Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Symmetrical Side Gates
5. Electrical characteristics of 20-nm junctionless Si nanowire transistors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs;Microsystem Technologies;2024-04-20
2. Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate;Physica Scripta;2024-03-28
3. Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications;IEEE Access;2024
4. Design and Comparative Analysis of FD-SOI FinFET with Dual-dielectric Spacers for High Speed Switching Applications;Silicon;2023-11-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3