Electrical characteristics of 20-nm junctionless Si nanowire transistors-Reference-Cited by-同舟云学术

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Electrical characteristics of 20-nm junctionless Si nanowire transistors

Published:2012-07 Issue: Volume:73 Page:7-10
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Park Chan-Hoon,Ko Myung-Dong,Kim Ki-Hyun,Baek Rock-Hyun,Sohn Chang-Woo,Baek Chang Ki,Park Sooyoung,Deen M.J.,Jeong Yoon-Ha,Lee Jeong-Soo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Hydrogen annealing effect on DC and low frequency noise characteristics in CMOS FinFETs;Lee;IEEE Electron Dev Lett,2003

2. Nickel salicided source/drain extension for performance improvement in ultrascaled (sub 10nm) Si-nanowire transistors;Jiang;IEEE Electron Dev Lett,2009

3. Nanowire transistors without junctions;Colinge;Nat Nanotechnol,2010

4. Junctionless multigate field-effect transistor;Lee;Appl Phys Lett,2009

5. http://www.silvaco.com.

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