Ultra-Thin High-K Dielectric Profile Based NBTI Compact Model for Nanoscale Bulk MOSFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-9984-z.pdf
Reference42 articles.
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2. Krishnan AT, Reddy V, Chakravarthi S, Rodriguez J, John S, Krishnan S (2003) NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs]. In: IEEE International on Electron Devices Meeting, 2003. IEDM’03 Technical Digest, pp 14–15
3. Tsujikawa S, Yugami J (2005) Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin siON gate dielectrics. Microelectron Reliab 45(1):65–69
4. Mahapatra S, Alam MA, Kumar PB, Dalei TR, Varghese D, Saha D (2005) Negative bias temperature instability in CMOS devices. Microelectron Eng 80:114–121
5. Kerber A, Nigam T (2013) Challenges in the characterization and modeling of BTI induced variability in metal gate/High-k CMOS technologies. In: 2013 IEEE International on Reliability Physics Symposium (IRPS), pp 2D–4
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