Impacts of material parameters on breakdown voltage and location for power MOSFETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10825-022-01920-x.pdf
Reference16 articles.
1. Fujishima, N., Sugi, A., Kajiwara, S., Matsubara, K., Nagayasu, Y., Salama, C.A.T.: A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact. IEEE Trans. Electron Devices 49(8), 1462–1468 (2002)
2. Luo, X., Fan, J., Wang, Y., Lei, T., Qiao, M., Zhang, B., Udrea, F.: Ultralow specific on-resistance high-voltage SOI lateral MOSFET. IEEE Electron Device Lett. 32(2), 185–187 (2010)
3. Yue, L., Zhang, B., Li, Z.: A lateral power MOSFET with the double extended trench gate. IEEE Electron Device Lett. 33(8), 1174–1176 (2012)
4. Shiozawa, K., Oishi, T., Sugihara, K., Furukawa, A., Abe, Y., Tokuda, Y.: Advantage of shallow trench isolation over local oxidation of silicon on alignment tolerance. Jpn. J. Appl. Phys. 38(3A), L234 (1999)
5. Sze, S.M., Li, Y., Ng, K.K.: Physics of Semiconductor Devices. Wiley, New York (2021)
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