Author:
Tsujikawa Shimpei,Yugami Jiro
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Effect of nitrogen at SiO2/Si interface on reliability issues––negative-bias temperature instability and Fowler–Nordheim-stress degradation;Abdelghafar;J. Appl. Phys,2002
2. Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems;Fujieda;Appl. Phys. Lett,2003
3. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices;Jeppson;J. Appl. Phys,1977
4. Reddy V, Krishnan AT, Marshall A, Rodriguez J, Natarajan S, Rost T, et al. Impact of negative bias temperature instability on digital circuit reliability. In: Proceedings of the 40th International Reliability Physics Symposium, IRPS 02, 2002. p. 248
5. Terai M, Yamamoto T, Watanabe K, Togo M, Masuzaki K, Ikezawa N, et al. Impact of nitrogen profile on negative-bias temperature instability and CMOS performance. Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002. p. 752
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