Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique-Reference-Cited by-同舟云学术

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Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique

Published:2023-10 Issue:5 Volume:52 Page:429-438
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Abdelmadjid Benabdelmoumene ,Djezzar Boualem,Messaoud Dhiaelhak,Boubaaya Mohamed,Chenouf Amel,Zatout Boumediene

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063739723700646.pdf

Reference38 articles.

1. Gao, R., Manut, A., Ji, Z., Ma, J., Duan, M., Zhang, J.F., Franco, J., Hatta, S.W.M., Zhang, W.D., Kaczer, B., Vigar, D., Linten, D., and Groeseneken, G., Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation, IEEE Trans. Electron Devices, 2017, vol. 64, no. 4, pp. 1467–1473. https://doi.org/10.1109/ted.2017.2669644

2. Zeng, Ya., Li, X., Wang, Ya., Sun, Ya., Shi, Ya., Guo, A., Hu, S., Chen, S., and Zhao, Yu., Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered, Microelectron. Reliab., 2017, vol. 75, pp. 20–26. https://doi.org/10.1016/j.microrel.2017.06.006

3. Campbell, J.P., Lenahan, P.M., Cochrane, C.J., Krishnan, A.T., and Krishnan, S., Atomic-scale defects involved in the negative-bias temperature instability, IEEE Trans. Device Mater. Reliab., 2007, vol. 7, no. 4, pp. 540–557. https://doi.org/10.1109/tdmr.2007.911379

4. Alam, M. and Mahapatra, S., A comprehensive model of PMOS NBTI degradation, Microelectron. Reliab., 2005, vol. 45, no. 1, pp. 71–81. https://doi.org/10.1016/j.microrel.2004.03.019

5. Krishnan, A.T., Reddy, V., Chakravarthi, S., Rodriguez, J., John, S., and Krishnan, S., NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs], IEEE International Electron Devices Meeting 2003, Washington, D.C., 2003, IEEE, 2003, pp. 349–352. https://doi.org/10.1109/iedm.2003.1269296

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