Challenges in the characterization and modeling of BTI induced variability in metal gate / High-k CMOS technologies
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6523362/6531927/06531959.pdf?arnumber=6531959
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimized LDMOS Offering for Power Management and RF Applications;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
2. An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2021-11-01
3. Integral impact of PVT variation with NBTI degradation on dynamic and static SRAM performance metrics;International Journal of Electronics;2021-04-11
4. Defect-Based Compact Modeling of Random Telegraph Noise;Noise in Nanoscale Semiconductor Devices;2020
5. Impact of Time Zero Variability and BTI Reliability on SiNW FET-Based Circuits;IEEE Transactions on Device and Materials Reliability;2019-12
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