Integral impact of PVT variation with NBTI degradation on dynamic and static SRAM performance metrics-Reference-Cited by-同舟云学术

Integral impact of PVT variation with NBTI degradation on dynamic and static SRAM performance metrics

Published:2021-04-11 Issue:2 Volume:109 Page:293-316
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Picardo Siona Menezes¹^ORCID,Shaik Jani Babu²,Goel Nilesh¹,Singhal Sonal²^ORCID

Affiliation:

1. Electrical and Electronics Engineering Department, Birla Institute of Technology and Science (BITS) Pilani - Dubai Campus, Dubai, United Arab Emirates

2. Electrical Engineering Department, Shiv Nadar University, Great Noida, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2021.1908628

Reference28 articles.

1. Influence of Design and Process Parameters of 32-nm Advanced-Process High-k p-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

2. The impact of intrinsic device fluctuations on CMOS SRAM cell stability

3. Correlation of Dynamic and Static Metrics of SRAM Cell under Time-Zero Variability and After NBTI Degradation

4. Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages

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