β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01510-9.pdf
Reference50 articles.
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3. Wei S, Zhang G, Shao Z, Geng L, Yang CF (Oct. 2018) Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL. Microsyst Technol 24(10):3949–3956. https://doi.org/10.1007/s00542-017-3532-4
4. Madadi D, Orouji AA, Abbasi A (2020) Improvement of nanoscale SOI MOSFET heating effects by vertical Gaussian drain-source doping region. Silicon 13:645–651. https://doi.org/10.1007/s12633-020-00453-x
5. Madadi D, Orouji AA (2020) Investigation of Short Channel Effects in SOI MOSFET with 20 nm Channel Length by a β -Ga 2 O 3 Layer. ECS J Solid State Sci Technol 9(4):045002. https://doi.org/10.1149/2162-8777/ab878b
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