Improvement of Nanoscale SOI MOSFET Heating Effects by Vertical Gaussian Drain-Source Doping Region
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-020-00453-x.pdf
Reference17 articles.
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3. Anvarifard MK, Orouji AA (2015) Enhanced critical electrical characteristics in a nanoscale low-voltage SOI MOSFET with dual tunnel diode. IEEE Trans Electron Devices 62(5):1672–1676
4. Anvarifard MK (2016) Successfully controlled potential distribution in a novel high-voltage and high-frequency SOI MESFET. IEEE Trans Device Mater Reliab 16(4):631–637
5. Anvarifard MK, Orouji AA (2015) Evidence for enhanced reliability in a novel Nanoscale partially-depleted SOI MOSFET. IEEE Trans Device Mater Reliab 15(4):536–542
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