β-Ga<sub>2</sub>O<sub>3</sub> Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology-Reference-Cited by-同舟云学术

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β-Ga₂O₃ Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology

Published:2024-03-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)
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Author:

Gagan ¹,Aggarwal Akansha¹,Marothya Himanshu²

Affiliation:

1. Jamia Millia Islamia,Department of Electronics & Communication Engineering,New Delhi,India

2. Jamia Millia Islamia,Department of Applied Sciences & Humanities,New Delhi,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10502389/10502407/10502408.pdf?arnumber=10502408

Reference40 articles.

1. Nanowire transistors without junctions

2. Junctionless multigate field-effect transistor

3. Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced Effects

4. Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

5. An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

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