Author:
Song QingWen,Zhang YuMing,Zhang YiMen,Tang XiaoYan
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Reference13 articles.
1. Ryu S H, Capell C, Jonas C, et al. Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs. In: 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bruges, 2012, 257–260
2. Song Q W, Zhang Y M, Zhang Y M, et al. Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC. Sci China Tech Sci, 2012, 55: 3401–3404
3. Zhu L, Chow T P. Advanced high-voltage 4H-SiC Schottky rectifiers. IEEE Trans Electron Devices, 2008, 55: 1871–1874
4. Haradaa S, Ito S, Kato M, et al. Isotropic channel mobility in UMOSFETs on 4H-SiC C-face with vicinal off-angle. Mater Sci Forum, 2010, 645–648: 999–1004
5. Song Q W, Zhang Y M, Zhang Y M, et al. Atomic layer deposited high-k Hfx Al(1−x)O as an alternative gate dielectric for 4H-SiC MIS based transistors. Sci China Tech Sci, 2012, 55: 606–609
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献