4H-SiC monolithic Darlington transistors with slight current gain drop at high collector current density
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/article/10.1007/s11431-017-9208-4/fulltext.html
Reference18 articles.
1. She X, Huang A Q, Lucia O, et al. Review of silicon carbide power devices and their applications. IEEE Trans Ind Electron, 2017, 64: 8193–8205
2. Song Q W, Yuan H, Han C, et al. Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current. Sci China Tech Sci, 2015, 58: 1369–1374
3. Song Q W, Zhang Y M, Zhang Y M, et al. 4H-SiC trench gate MOSFETs with field plate termination. Sci China Tech Sci, 2014, 57: 2044–2049
4. Liu G, Tuttle B R, Dhar S. Silicon carbide: A unique platform for metal-oxide-semiconductor physics. Appl Phys Rev, 2015, 2: 021307
5. Calderon-Lopez G, Forsyth A J, Gordon D L, et al. Evaluation of SiC BJTs for high-power DC-DC converters. IEEE Trans Power Electron, 2014, 29: 2474–2481
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