Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch-Reference-Cited by-同舟云学术

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Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch

Published:2019-09 Issue: Volume:217 Page:111092
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chen Hui,Tang Xiaoyan,Song Qingwen,Zhang Yimeng,Bai Zhiqiang,Zhang Yuming

Funder

Science Challenge Project of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

2. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

3. Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer;Tawara,2017

4. A study on SiC devices in synchronous rectification of DC-DC converter;Funaki,2007

5. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications;Jiang,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

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