Analog and RF assessment of sub-20 nm 4H-SiC trench gate MOSFET for high frequency applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering
Reference29 articles.
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2. Split-Gate 1.2-kV 4H-SiC MOSFET: analysis and experimental validation;Han;IEEE Electron Device Lett,2017
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4. Modeling the effect of source/drain junction depth on bulk-MOSFET scaling;Murali;Solid State Electron,2007
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