Comprehensive study of a 4H–SiC MES–MOSFET
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. 1330V, 67mΩcm2 4H–SiC (0001) RESURF MOSFET;Kimoto;IEEE Electron Device Lett.,2005
2. Experimental and theoretical investigations on short-channel effects in 4H–SiC MOSFETs;Noborio;IEEE Trans. Electron Devices,2005
3. Off-state Avalanche-breakdown- reduced on-resistance degradation in lateral DMOS transistors;Chen;IEEE Electron Device Lett.,2007
4. A numerical model of Avalanche breakdown in MOSFETs;Toyabe;IEEE Trans. Electron Devices,1978
5. A new buried-oxide-in-drift-region trench MOSFET with improved breakdown voltage;Saxena;IEEE Electron Device Lett.,2009
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved 4H–SiC MESFET with bulgy channel;Micro and Nanostructures;2022-06
2. Performance Analysis of DGFET, MESFET, and SOI on Varying Device Intrinsic Input Parameters;Sustainable Technology and Advanced Computing in Electrical Engineering;2022
3. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs;Micromachines;2021-04-16
4. A new analytical model for the response of AlGaN/GaN HEMT-based pH sensors;Journal of Computational Electronics;2021-03-29
5. Numerical Investigation of Gate Field Plate AlGaN/GaN HEMT with Multi-recessed Buffer;Computers and Devices for Communication;2021
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3