A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/5224033/05184890.pdf?arnumber=5184890
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A FIN-LDMOS with Bulk Electron Accumulation Effect;Micromachines;2023-06-10
2. An Integrated Split and Dummy Gates MOSFET With Fast Turn-off and Reverse Recovery Characteristics;Chinese Physics B;2022-09-08
3. Bulk Electron Accumulation LDMOS With Extended Superjunction Gate;IEEE Transactions on Electron Devices;2022-04
4. High Performance Trench Gate Power MOSFET of Indium Phosphide;Nanoelectronic Materials and Devices;2017-11-28
5. Ultra-Low On-Resistance LDMOS With Multi-Plane Electron Accumulation Layers;IEEE Electron Device Letters;2017-07
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