4H–SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications-Reference-Cited by-同舟云学术

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4H–SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications

Published:2022-07 Issue: Volume:125 Page:105472
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Nan Yagong,Han Genquan

Publisher

Elsevier BV

Subject

General Engineering

Reference52 articles.

1. Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance;Kazutoshi;Appl. Phys. Lett.,2020

2. Analysis of trench termination in 4H-nSiC based power devices;Jyoti;Mater. Today Proc.,2021

3. Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode;Junbo;Appl. Phys. Lett.,2017

4. Reconfigurable perovskite nickelate electronics for artificial intelligence;Hai Tian;Science,2022

5. Semiconductor plasmonic nanolasers: current status and perspectives;Gwo;Rep. Prog. Phys.,2016

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical model and optimization strategy for SiC floating junction JBS diodes;Microelectronics Journal;2023-07

2. A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD);Crystals;2023-04-10

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