Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode-Reference-Cited by-同舟云学术

Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode

Published:2017-04-03 Issue:14 Volume:110 Page:142103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Junbo¹^ORCID,Park Kun-Sik¹,Won Jong-il¹,Kim Ki-hwan¹²,Koo Sangmo²,Kim Sang-gi¹,Mun Jae-Kyoung¹

Affiliation:

1. Electronics and Telecommunication Research Institute (ETRI), Daejeon, 305-700, South Korea

2. Department of Electronic Material Engineering, Kwangwoon University, Seoul 139-701, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979790

Reference19 articles.

1. The pinch rectifier: A low-forward-drop high-speed power diode

2. Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier

3. "The merged P-I-N Schottky (MPS) rectifier: A high-voltage, high-speed power diode"

4. S. Sawant and B. J. Baliga , in Proceedings of the 10th International Symposium on Power Semiconductor Devices (ISPSD) (1998), p. 297.

5. B. Heinze , J. Lutz , M. Neumeister , R. Rupp , and M. Holz , in Proceedings of the 20th International Symposium on Power Semiconductor Devices (ISPSD) (2008), p. 245.

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