Affiliation:
1. School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
2. The Key Laboratory of the Third Generation Semiconductor, Southern University of Science and Technology, Shenzhen 518055, China
3. Founder Microelectronics International Co., Ltd., Shenzhen 518116, China
Abstract
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss.
Funder
Shenzhen Science and Technology Program
Guangdong Key Research and Development Program of China
National Natural Science Foundation of China
Research on novelty low-resistance Source/Drain ohmic contact for GaN p-FET
Research on the Fabrication and Mechanism of GaN power and RF devices
Research on the GaN Chip for 5G Applications
Research on High-reliable GaN Power Device and Related Industrial Power System
Special Funds for the Cultivation of Guangdong College Students’ Scientific and Technological Innovation
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
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