Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance-Reference-Cited by-同舟云学术

Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance

Published:2020-01-06 Issue:1 Volume:116 Page:012103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kojima Kazutoshi¹^ORCID,Okumura Hajime¹^ORCID

Affiliation:

1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5130732

Reference28 articles.

1. Fundamentals of Power Semiconductor Devices

2. W. Saito , I. Omura , K. Takano , T. Ogura , and H. Ohashi , in Proceedings of the International Symposium on Power Semiconductor Devices and IC's ( IEEE, 2002), p. 33.

3. SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC

4. Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

5. Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)

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