Affiliation:
1. Toshiba Corporation
2. National Institute of Advanced Industrial Science and Technology (AIST)
Abstract
4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was
found that their properties are closest to the theoretical limitation, defined by the relationship between
specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type
floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a
few micrometers of spacing width were found to be nearly equal to those of conventional SBDs
without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of
conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between
specific on-state resistance and breakdown voltage, and the highest value to date for Baliga’s Figure
of Merit (BFOM) has been obtained.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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