4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination-Reference-Cited by-同舟云学术

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4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination

Published:2023-11-27 Issue: Volume: Page:76-79
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
language:
Short-container-title:

Author:

Wang Ce¹,Wang Hengyu¹,Huang Linyang¹,Hu Pengfei¹,Que Qianqian¹,Cheng Haoyuan¹,Wan Jiangbin¹,Zhang Chi¹,Sheng Kuang¹

Affiliation:

1. Zhejiang University,Hangzhou,China

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399675.pdf?arnumber=10399675

Reference21 articles.

1. Theory of a novel voltage-sustaining layer for power devices

2. Theory of Semiconductor Superjunction Devices

3. Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation

4. Design and Fabrication of 1.92 kV 4H-SiC Super-Junction SBD With Wide-Trench Termination

5. Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

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