Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9761777/09741300.pdf?arnumber=9741300
Reference19 articles.
1. Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
2. 4H-SiC Super-Junction JFET: Design and Experimental Demonstration
3. Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode
4. Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique
5. Performance analysis of 4H-SiC super-junction devices: impact of trench angle and improvement with multi-epi structure
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3. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique;Micromachines;2023-12-07
4. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
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