Author:
Zhong Xueqian,Wang Baozhu,Sheng Kuang
Cited by
38 articles.
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1. Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01
3. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique;Micromachines;2023-12-07
4. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability;2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL);2023-06-25