Theory of Semiconductor Superjunction Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 333 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity 〈0001〉 channeled ions with atomic numbers of 12 to 15;Japanese Journal of Applied Physics;2024-09-02
2. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV;Materials Science in Semiconductor Processing;2024-08
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4. Experimental Investigation of a Novel 750V SJ-RET-IGBTs (Superjunction Recessed Emitter Trench IGBTs) for the Automotive Application;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
5. Enhanced Theoretical Lower Limit for the Specific On-Resistance of a Silicon Balanced Superjunction;IEEE Transactions on Electron Devices;2024-06
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