Experimental Investigation of a Novel 750V SJ-RET-IGBTs (Superjunction Recessed Emitter Trench IGBTs) for the Automotive Application-Reference-Cited by-同舟云学术

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Experimental Investigation of a Novel 750V SJ-RET-IGBTs (Superjunction Recessed Emitter Trench IGBTs) for the Automotive Application

Published:2024-06-02 Issue: Volume: Page:29-32
ISSN:
Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Su Arthur¹,Guan Jianing¹,Qin Rongzhen²,Trajkovic Tanya³,Udrea Florin³

Affiliation:

1. Research & Development Centre, Dynex Semiconductor,Lincoln,United Kingdom

2. CRRC Times Semiconductor Ltd,State Key Laboratory of Advanced Power Semiconductor Devices,Zhuzhou,China

3. Cambridge Microelectronics Ltd & University of Cambridge,Cambridge,United Kingdom

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579652.pdf?arnumber=10579652

Reference8 articles.

1. A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness

2. A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses

3. Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT

4. Experimental evaluation of a 600 V super-junction planar PT IGBT prototype — Comparison with planar PT and trench gate PT technologies

5. Superjunction Power Devices, History, Development, and Future Prospects

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