The correlation of the drain-source capacitance variation and the P-pillar structures in a 4H-SiC quasi super junction MOSFET
-
Published:2024-08
Issue:
Volume:178
Page:108413
-
ISSN:1369-8001
-
Container-title:Materials Science in Semiconductor Processing
-
language:en
-
Short-container-title:Materials Science in Semiconductor Processing
Author:
Wu Ruei-Ci,
Lee Kung-YenORCID,
Wen Yan-Yu,
Liao Pei-Chun
Reference20 articles.
1. Theory of semiconductor superjunction devices;Fujihira;Jpn. J. Appl. Phys.,1997
2. K. Chen, Z. Zhao, L. Yuan, T. Lu, F. He, "The impact of nonlinear junction capacitance on switching transient and its modeling for SiC MOSFET," IEEE Trans. Electron. Dev., 62(2), 333-338, doi: 10.1109/TED.2014.2362657..
3. Fundamentals of Power Semiconductor Devices;Baliga,2008
4. High-temperature performance of 1.2 kV-class SiC super junction MOSFET;Kobayashi,2019