Funder
Engineering and Physical Science Research Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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1. Epitaxial trench refill of 4H-SiC by chlorinated chemistry;Applied Physics Letters;2024-05-06
2. Optimization of 1700V 4H-SiC Semi-Superjunction Schottky Diode with Multi-Step Trenched Structure;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. On the deformation mechanism of SiC under nano-scratching: An experimental investigation;Wear;2023-06
5. A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation;Materials Science Forum;2022-05-31