Author:
Hu Jiahao,He Yang,Li Zhen,Zhang Liangchi
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics
Reference28 articles.
1. C.H. Carter Jr., V.F. Tsvetkov, R.C. Glass, D. Henshall, M. Brady, St.G. Muller, O. Kordina, K. Irvine, J.A. Edmond, H.-S. Kong, R. Singh, S.T. Allen, J.W. Palmour, Progress in SiC: from material growth to commercial device development, Mater. Sci. Eng., B 61 (1999) 1–8.
2. Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization;Baker;IEEE Trans. Electron. Dev.,2021
3. The current understanding on the diamond machining of silicon carbide;Goel;J. Phys. D Appl. Phys.,2014
4. Advances in Silicon Carbide Processing and Applications;Saddow,2004
5. Playing with carbon and silicon at the nanoscale;Mélinon;Nat. Mater.,2007
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