Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11431-012-4827-4.pdf
Reference9 articles.
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2. Danno K, Kimoto T. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons. J Appl Phys, 2006, 100(11): 113728
3. Storasta L, Bergman J P, Janzén E, et al. Deep levels created by low energy electron irradiation in 4H-SiC. J Appl Phys, 2004, 96(9): 4909
4. Negoro Y, Kimoto T, Matsunami H, et al. Electrical activation of high-concentration aluminium implanted in 4H-SiC. J Appl Phys, 2004, 96(09): 4916
5. Saks N S, Suvorov A V, Capell D C. High temperature high-dose implantation of aluminium in 4H-SiC. Appl Phys Lett, 2004, 84(25): 5195
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