Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping-Reference-Cited by-同舟云学术

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Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping

Published:2019-05-17 Issue: Volume: Page:
ISSN:
Container-title:14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
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Author:

Jadoon Atif Mehmood,Ji Lingfei,Lin Zhenyuan

Publisher

SPIE

Reference16 articles.

1. Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in4Hsilicon carbide from the donor-acceptor pair emission

2. Electrical activation of high-concentration aluminum implanted in 4H-SiC

3. Site effect on the impurity levels in4H,6H, and15RSiC

4. Deep centers and electroluminescence in 4HSiC diodes with a p-type base region

5. Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. p-Type carrier concentration enhancement analysis of 4H–SiC by wet chemical laser doping;Materials Science in Semiconductor Processing;2022-06

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