The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications-Reference-Cited by-同舟云学术

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The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Published:2017-12-05 Issue: Volume: Page:273-280
ISSN:
Container-title:Proceedings of the Scientific-Practical Conference "Research and Development - 2016"
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Author:

Gudkov A. G.,Shashurin V. D.,Vyuginov V. N.,Tikhomirov V. G.,Vidyakin S. I.,Agasieva S. V.,Gorlacheva E. N.,Chizhikov S. V.

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-62870-7_30

Reference24 articles.

1. Faraclas, E., Anwar, A.: AlGaN/GaN HEMTs: experiment and simulation of DC characteristics. Solid-State Electron. 50(6), 1051–1056 (2006)

2. Tikhomirov, V., Parnes, Ya., Vyuginov, V.: Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation. Semiconductors. 50(2), 244–248 (2016)

3. Vitanov, S., Palankovski, V., Murad, S.: Predictive simulation of AlGaN/GaN HEMTs. In: IEEE compound semiconductor IC symposium, p. 131–134 (2007)

4. Ambacher, O., Majewski, J., Miskys, C.: Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum-well structures. J. Phys. Condens. Matter. 14(13), 3399–3434 (2002)

5. Vitanov, S., Palankovski, V.: Normally-off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study. Solid-State Elect. 52, 1791 (2008)

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1. Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching;Electronics;2024-06-25

2. Enhancement in Analog/RF and Power Performance of Underlapped Dual-Gate GaN-Based MOSHEMTs with Quaternary InAlGaN Barrier of Varying Widths;Journal of Electronic Materials;2021-11-21

3. An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT;Silicon;2020-06-17

4. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs;ECS Journal of Solid State Science and Technology;2019

5. Mechanical and electronic properties under high pressure on ternary AlGaN and InGaN compounds—a first-principles perspective;Materials Research Express;2018-10-30

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