Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs
Author:
Funder
NSF I/UCRC on Multi-functional Integrated System Technology (MIST) Center
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference47 articles.
1. The 2018 GaN power electronics roadmap
2. Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
3. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
4. Fabless design approach for lateral optimization of low voltage GaN power HEMTs
5. Bahat-Treidel E. , GaN-Based HEMTs for High Voltage Operation., PhD, Technical University of Berlin, 2012.
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