Fabless design approach for lateral optimization of low voltage GaN power HEMTs-Reference-Cited by-同舟云学术

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Fabless design approach for lateral optimization of low voltage GaN power HEMTs

Published:2018-09 Issue: Volume:121 Page:92-106
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Binder Andrew,Yuan Jiann-Shiun,Krishnan Balakrishnan,Shea Patrick M.

Funder

Multi-functional Integrated System Technology (MIST)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Efficient Power Conversion Corporation;EPC2023 – Enhancement Mode Power Transistor Datasheet,2017

2. The 2018 GaN power electronics roadmap;Amano;J. Phys. Appl. Phys.,2018

3. Wide bandgap technologies and their implications on miniaturizing power electronic systems;Mantooth;IEEE Journal of Emerging and Selected Topics in Power Electronics,2014

4. Cost-benefit analysis of computer-aided technology customization projects;Saha;Open J. Bus. Manag.,2017

5. Threshold voltage engineering in GaN-based HFETs: a systematic study with the threshold voltage reaching more than 2 V;Hahn;IEEE Trans. Electron. Dev.,2015

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3. Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates;Physics of the Solid State;2019-12

4. Switching Loss Characterization of GaN-based Buck Converter under Different Substrate Biases;2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2019-10

5. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates;Semiconductors;2019-09

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