Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates-Reference-Cited by-同舟云学术

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Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

Published:2019-12 Issue:12 Volume:61 Page:2277-2281
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Mizerov A. M.,Kukushkin S. A.,Sharofidinov Sh. Sh.,Osipov A. V.,Timoshnev S. N.,Shubina K. Yu.,Berezovskaya T. N.,Mokhov D. V.,Buravlev A. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378341912031X.pdf

Reference16 articles.

1. K. Kim, M. Hua, D. Liu, J. Kim, K. J. Chen, and Z. Ma, Nano Energy 43, 259 (2018).

2. R. Hentschel, J. Gärtner, A. Wachowiak, A. Großer, T. Mikolajick, and S. Schmult, J. Cryst. Growth 500, 1 (2018).

3. A. Binder, J.-S. Yuan, B. Krishnan, and P. M. Shea, Superlatt. Microstruct. 121, 92 (2018).

4. G. H. Chung, T. A. Vuong, and H. Kim, Results Phys. 12, 83 (2019).

5. Y. Li, X. Xiu, Z. Xiong, X. Hua, Z. Xie, T. Tao, P. Chen, B. Liu, R. Zhang, and Y. Zheng, Mater. Lett. 240, 121 (2019).

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1. Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates;Optical Materials;2023-11

2. Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review);Russian Journal of General Chemistry;2022-04

3. SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors;Mechanics and Control of Solids and Structures;2022

4. Separation of AlN layers from silicon substrates by KOH etching;Journal of Physics: Conference Series;2021-12-01

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