Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE-Reference-Cited by-同舟云学术

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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Published:2018-10 Issue: Volume:500 Page:1-4
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hentschel R.,Gärtner J.,Wachowiak A.,Großer A.,Mikolajick T.,Schmult S.

Funder

German Federal Ministry of Economics and Technology – BMWI

German Ministry of Education and Research – BMBF

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate

2. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

3. C.S. Suh, A. Chini, Y. Fu, C. Poblenz, J.S. Speck, U.K. Mishra, in: 2006 64th Device Res. Conf, 2006, pp. 163–164.

4. GaN on Si Technologies for Power Switching Devices

5. GaN-on-Si Power Technology: Devices and Applications

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