Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates-Reference-Cited by-同舟云学术

Thermal effect on dynamic R_on degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Published:2020-09-10 Issue:17 Volume:17 Page:20200255-20200255
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Hu Manqing¹,Liu Gengxin¹,Du E¹,Mu Feiyan¹

Affiliation:

1. Communication and Information Engineering Department, Chengdu College of University of Electronic Science and Technology of China

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/17/17_17.20200255/_pdf

Reference30 articles.

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2. [2] Q. Zhou, et al.: “Tri-gated hybrid anode AlGaN/GaN power diode with intrinsic low turn-on voltage and ultralow reverse leakage current,” IEEE Trans. Electron Devices 67 (2020) 1712 (DOI: 10.1109/TED.2020.2971384).

3. [3] A. Binder, et al.: “P.M. effects of heterostructure design on performance for low voltage GaN power HEMTs,” ECS Journal of Solid State Science and Technology 8 (2019) Q15 (DOI: 10.1149/2.0141902jss).

4. [4] W. Yang, et al.: “Substrate bias effect on dynamic characteristics of a monolithically integrated GaN half-bridge,” 2020 IEEE International Reliability Physics Symposium (IRPS) (2020) 1 (DOI: 10.1109/IRPS45951.2020.9128309).

5. [5] W. Yang, et al.: “Low-side GaN power device dynamic Ron characteristics under different substrate biases,” 2019 IEEE International Reliability Physics Symposium (IRPS) (2019) 1 (DOI: 10.1109/IRPS.2019.8720433).

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