Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor-Reference-Cited by-同舟云学术

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

Published:2021-10-10 Issue:19 Volume:18 Page:20210332-20210332
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

He Liang¹,Ni Yiqiang¹,Li Liuan²,He Zhiyuan³,Li Xiaobo⁴,Pu Taofei⁴,Ao Jinping⁴

Affiliation:

1. No.5 Electronics Research Institute of the Ministry of Industry and Information Technology

2. State Key Laboratory of Superhard Material, Jilin University

3. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology

4. Institute of Technology and Science, Tokushima University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/18/19/18_18.20210332/_pdf

Reference31 articles.

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3. [3] M. Mi, et al.: “The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT,” IEICE Electron. Express 12 (2015) 20150943 (DOI: 10.1587/elex.12.20150943).

4. [4] M. Hu, et al.: “Thermal effect on dynamic Ron degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates,” IEICE Electron. Express 17 (2020) 20200255 (DOI: 10.1587/elex.17.20200255).

5. [5] L. Yang, et al.: “Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole,” AIP Advances 10 (2020) 045219 (DOI: 10.1063/5.0004470).

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