Author:
Faraclas Elias W.,Anwar A.F.M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Daumiller I, Kirchner C, Kamp M, Ebeling K, Pond L, Weitzel CE, et al. Evaluation of AlGaN/GaN HFET’s up to 750°C, Device Res Conf Dig, 1998. p. 114–5.
2. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Dev Lett,2004
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs;Vetury;IEEE TED,2001
4. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors;Jogai;J Appl Phys,2003
5. High-field effects in silicon nitride passivated GaN MODFETs;Sahoo;IEEE TED,2003
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