Predictive Simulation of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Predictive Simulation of AlGaN/GaN HEMTs

Published:2007-10 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Compound Semiconductor Integrated Circuits Symposium
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Short-container-title:

Author:

Vitanov S.¹,Palankovski V.¹,Murad S.²,Rodle T.²,Quay R.³,Selberherr S.⁴

Affiliation:

1. Advanced Materials and Device Analysis Group

2. ICRF, NXP Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands

3. Fraunhofer Inst. for Solid-State Physics (IAF), Tullastraße 72, 79108 Freiburg, Germany

4. Inst. for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, 1040 Wien, Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4384379/4384380/04384411.pdf?arnumber=4384411

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic Level Process to Device Simulation of GaNFET Using TNL TCAD Tools;Advances in Electrical Control and Signal Systems;2020

2. Simulation Tools for E-Learning in Microelectronics and Nanoelectronics at the University;Communications in Computer and Information Science;2020

3. Physics‐Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT;Radio Science;2019-10

4. The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications;Proceedings of the Scientific-Practical Conference "Research and Development - 2016";2017-12-05

5. High-temperature modeling of AlGaN/GaN HEMTs;Solid-State Electronics;2010-10

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